Method of forming crown-shaped capacitor

Details Method of forming crown-shaped capacitor Method of forming crown-shaped capacitor

2000-01-21

2000-10-17

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438255, 438398, H01L 218242

Patent

active

061330884

ABSTRACT:
A method of forming a crown-shaped capacitor. A dielectric layer, a stopping layer and a first material layer are sequentially formed over a substrate, and then a contact plug is formed through the three layers above the substrate. A first doped amorphous silicon layer and a second material layer are sequentially formed over the first material layer and the contact plug. The second material layer and the first doped amorphous silicon layer are patterned to form an opening that exposes the contact plug. A second doped amorphous silicon layer is formed over the exposed surface of the opening and above the second material layer on each side of the opening. The second doped amorphous silicon layer also covers the sidewalls of the second material layer and the first amorphous silicon layer to form doped amorphous silicon spacers. The second material layer and the first material layer are removed. The stopping layer is removed to form a lower electrode structure that includes the first doped amorphous silicon layer, the second doped amorphous silicon layer, the doped amorphous silicon spacers and a portion of the contact plug.

REFERENCES:
patent: 5721168 (1998-02-01), Wu
patent: 5956587 (1999-09-01), Chen et al.
patent: 6071772 (2000-06-01), Chao

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