Method of forming copper interconnects

Details Method of forming copper interconnects Method of forming copper interconnects

2006-06-06

2006-06-06

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S634000, C438S636000, C438S637000, C438S687000

Reexamination Certificate

active

07056826

ABSTRACT:
A method of forming copper interconnects for an integrated circuit is provided. An antireflective coating layer is formed over an insulating layer formed over a semiconductor substrate. An interconnect pattern is patterned and etched into said insulating layer. A diffusion barrier layer is then conformally deposited in a deposition chamber along the etched interconnect pattern, wherein the antireflective coating is removed in said chamber before deposition of the barrier layer. Copper interconnects are then formed in the interconnect pattern etched in the insulating layer.

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