Method of forming contacts for a semiconductor device

Details Method of forming contacts for a semiconductor device Method of forming contacts for a semiconductor device

1998-08-26

2000-09-05

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438701, H01L 21469

Patent

active

061142379

ABSTRACT:
A method of forming contacts of a semiconductor device while improving a step coverage and increasing margins between the device and an adjacent device. The novel method comprises the steps of forming an interlayer insulating film. A contact hole is formed in the interlayer insulating film. A mask layer is deposited over the contact hole to a thickness sufficient to withstand the planarization process and is planarization-etched. Wet-etching is performed over the entire semiconductor substrate, thereby etching the interlayer insulating film, wherein the wet-etching is characterized in that exposed portions of the interlayer insulating film outside of the contact hole and interfacing the mask layer are etched faster than other upper exposed portions of the interlayer insulating film. As a result, the contact hole has a sloped-sidewalls profile. With this sloped profile of the contact sidewalls, the step coverage of the metal line can be improved and the horizontal margins for isolating devices is increased, thus improving the degree of integration.

REFERENCES:
patent: 5461004 (1995-10-01), Kim

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