Method of forming contacts and vias in semiconductor

Details Method of forming contacts and vias in semiconductor Method of forming contacts and vias in semiconductor

1997-04-16

1999-12-07

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438629, 438625, 438648, 438688, 438637, H01L 21283

Patent

active

059982969

ABSTRACT:
A method of filling openings (20, 50) in a semiconductor (10, 40) includes the steps of first forming a fill metal layer (30, 60) over the semiconductor which substantially covers the openings (20, 50). Thereafter, a surface coating (32, 62, 64) of a predetermined material is formed over the fill metal layer (30, 60). Then, high pressure is applied on the surface coating (32, 62, 64) to force the fill metal into the openings (20, 50). Metal film surface cracks previously plaguing force-fill processes are thereby eliminated or substantially reduced.

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