Method of forming contact plugs in a semiconductor device

Details Method of forming contact plugs in a semiconductor device Method of forming contact plugs in a semiconductor device

1998-09-08

2000-09-12

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438633, 438631, 438626, 438629, 438622, 438672, H01L 214763

Patent

active

061177660

ABSTRACT:
A method of forming contact plugs in a semiconductor device employing multiple steps of a selective polishing technique is provided. This method selectively removes an interlayer insulating film and a conductive layer, thereby providing layers polished with a CMP process improved planarity and uniformity. The method includes forming an interlayer insulating film over a semiconductor substrate having a plurality of diffusion regions and conductive layers. The interlayer insulating film has an uneven upper surface as deposited, following the contours produced by underlying structures formed on the semiconductor substrate. A contact hole is opened through the interlayer insulating film to expose an upper surface of a conductive layer or a semiconductor substrate in the first region. A second conductive layer is deposited over the resulting structure. The key step of the present invention is then accomplished by performing a plurality of selective polishing steps on the resulting structure.

REFERENCES:
patent: 5026666 (1991-06-01), Hills et al.
patent: 5960310 (1999-09-01), Jeong
patent: 5963837 (1999-10-01), Ilg et al.

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