Method of forming contact plug

Details Method of forming contact plug Method of forming contact plug

1998-09-03

2000-09-19

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438631, 438624, 438926, H01L 2144

Patent

active

061211362

ABSTRACT:
A method of forming a contact plug. A dummy pattern with an uneven surface is formed on a region of the substrate. A dielectric layer with an opening exposing a part of the substrate is formed on the dummy pattern and the substrate. A first wiring layer is formed on the dielectric layer and to fill the opening. A sandwich type spin-on-glass layer is formed on the first wiring layer. An opening penetrating through the sandwich type dielectric layer is formed, and the opening is filled with a contact plug.

REFERENCES:
patent: 5202275 (1993-04-01), Sugiura et al.

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