Method of forming contact hole

Details Method of forming contact hole Method of forming contact hole

2005-06-07

2005-06-07

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S275000, C438S279000, C438S734000, C438S740000, C438S750000

Reexamination Certificate

active

06903022

ABSTRACT:
A method of forming contact holes. A dielectric liner is comformally formed on a substrate, parts of the dielectric liner between the second and the third conducting structure are removed, a conductive liner is conformally formed on the substrate, and parts of the metal layer are removed to leave parts thereof between the second and the third conducting structure. An ILD layer is then formed on the entire surface of the substrate, and a patterned photoresist layer is formed on the ILD layer. Finally, the ILD layer is etched using the patterned photoresist layer as a mask to form a first contact hole, a second contact hole, and a third contact hole in the ILD layer at the same time.

REFERENCES:
patent: 6291296 (2001-09-01), Hui et al.
patent: 6410422 (2002-06-01), Sun et al.
patent: 6486033 (2002-11-01), Tu et al.
patent: 6548394 (2003-04-01), Peng et al.
patent: 2004/0147107 (2004-07-01), Gustin et al.

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