Method of forming complex oxide nanodots for a charge trap

Details Method of forming complex oxide nanodots for a charge trap Method of forming complex oxide nanodots for a charge trap

2007-08-17

2010-12-14

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S287000, C438S485000, C438S583000

Reexamination Certificate

active

07851307

ABSTRACT:
Methods and devices are disclosed, such as those involving forming a charge trap for, e.g., a memory device, which can include flash memory cells. A substrate is exposed to temporally-separated pulses of a titanium source material, a strontium source material, and an oxygen source material capable of forming an oxide with the titanium source material and the strontium source material to form the charge trapping layer on the substrate.

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