Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-12-25
2007-12-25
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S592000, C438S197000, C438S586000, C257SE21165
Reexamination Certificate
active
10936853
ABSTRACT:
A method of forming a cobalt disilicide layer and a method of manufacturing a semiconductor device using the same are provided. The method of forming a cobalt disilicide layer includes forming a cobalt layer on at least a silicon surface of a semiconductor device using metal organic chemical vapor deposition by supplying a cobalt precursor having a formula Co2(CO)6(R1—C≡C—R2), where R1is H or CH3, and R2is hydrogen, t-butyl, phenyl, methyl, or ethyl, as a source gas. Then, a capping layer is formed on the cobalt layer. A first thermal treatment is then performed on the semiconductor device in an ultra high vacuum, for example, under a pressure of 10−9-10−3torr, to react silicon with cobalt. Cobalt unreacted during the first thermal treatment and the capping layer are then removed and a second thermal treatment is performed on the semiconductor device to form the cobalt disilicide (CoSi2) layer.
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Notice to Submit Response, Korean Application No. 10-2003-0095410, Jul. 18, 2005.
Choi Gil-heyun
Kang Sang-bom
Kim Hyun-su
Sohn Woong-hee
Yun Jong-ho
Anya Igwe U.
Baumeister B. William
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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