Method of forming CMOS imager with storage capacitor

Details Method of forming CMOS imager with storage capacitor Method of forming CMOS imager with storage capacitor

2005-02-08

2005-02-08

Zorabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S060000, C438S239000, C438S241000, C438S243000

Reexamination Certificate

active

06852591

ABSTRACT:
A CMOS imager having an improved signal to noise ratio and improved dynamic range is disclosed. The CMOS imager provides improved charge storage by fabricating a storage capacitor in parallel with the photocollection area of the imager. The storage capacitor may be a flat plate capacitor formed over the pixel, a stacked capacitor or a trench imager formed in the photosensor. The CMOS imager thus exhibits a better signal-to-noise ratio and improved dynamic range. Also disclosed are processes for forming the CMOS imager.

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