Method of forming cavity between multilayered wirings

Details Method of forming cavity between multilayered wirings Method of forming cavity between multilayered wirings

2006-02-28

2006-02-28

McPherson, John A. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S324000, C430S325000, C430S270100

Reexamination Certificate

active

07005248

ABSTRACT:
A method that can readily form a cavity structure between metallic wirings in, for example, semiconductors using a polyamic acid and/or a polyimide obtained by reacting a specific alicyclic tetracarboxylic acid dianhydride and a specific alicyclic diamine. The method includes a step of coating the surface of a first dielectric film formed on a semiconductor substrate with a polyamic acid and/or a polyimide, a step of patterning a cavity-forming polymer between the multilayered wirings, a step of forming a second dielectric film on the cavity-forming polymer between the multilayered wirings containing a metallic wiring, and a step of removing the cavity-forming polymer between the multilayered wirings by heating to form a cavity between the metallic wirings.

REFERENCES:
patent: 6165890 (2000-12-01), Kohl et al.
patent: 6777159 (2004-08-01), Itatani et al.
patent: 2004/0132243 (2004-07-01), Kurosawa et al.

Affiliated with

Also associated with

Rating

Method of forming cavity between multilayered wirings does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming cavity between multilayered wirings, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming cavity between multilayered wirings will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3665630