Method of forming carbon polymer film using plasma CVD

Details Method of forming carbon polymer film using plasma CVD Method of forming carbon polymer film using plasma CVD

2006-03-23

2008-08-12

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257S643000

Reexamination Certificate

active

07410915

ABSTRACT:
A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas and CO2gas or H2gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas, thereby reducing extinction coefficient (k) at 193 nm and increasing mechanical hardness.

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patent: 5470661 (1995-11-01), Bailey et al.
patent: 6428894 (2002-08-01), Babich et al.
U.S. Appl. No. 11/172,031, filed Jun. 30, 2005, Nobuo Matsuki, et al.

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