Method of forming capacitor over bitline contact

Details Method of forming capacitor over bitline contact Method of forming capacitor over bitline contact

2006-09-19

2006-09-19

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S256000, C438S396000, C438S399000, C438S639000, C438S672000, C438S696000, C438S700000

Reexamination Certificate

active

07109080

ABSTRACT:
A method of forming a contact for a semiconductor device by forming a storage node contact in a semiconductor substrate having a first pad and a second pad formed thereon. The storage node contact is connected to the second pad. A bit line electrically insulated from the storage node contact by a spacer and electrically connected to the first pad.

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