Method of forming capacitor of semiconductor device

Details Method of forming capacitor of semiconductor device Method of forming capacitor of semiconductor device

2005-11-22

2005-11-22

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S785000, C438S386000, C438S393000, C438S396000, C438S381000, C438S243000, C438S250000, C438S253000, C438S003000

Reexamination Certificate

active

06967135

ABSTRACT:
Disclosed is a method of forming a capacitor of a semiconductor device which can secure a desired leakage current characteristic while securing a desired charging capacitance. The inventive method of forming a capacitor of a semiconductor device comprises steps of: forming a bottom electrode on a semiconductor substrate with a storage node contact so that the bottom electrode is connected with the storage node contact; plasma-nitrifying the bottom electrode to form a first nitrification film on the surface of the bottom electrode; forming a La2O3dielectric film on the bottom electrode including the first nitrification film; plasma-nitrifying the La2O3dielectric film to form a second nitrification film on the surface of the La2O3dielectric film; and forming a top electrode on the La2O3dielectric film including the second nitrification film.

REFERENCES:
patent: 5969935 (1999-10-01), Kammerdiner et al.
patent: 2002/0079588 (2002-06-01), Kim et al.
patent: 2002/0089023 (2002-07-01), Yu et al.
patent: 2003/0137019 (2003-07-01), Maria et al.
patent: 2005/0009370 (2005-01-01), Ahn et al.
patent: 2005/0124109 (2005-06-01), Quevedo-Lopez et al.

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