Method of forming capacitor for semiconductor device

Details Method of forming capacitor for semiconductor device Method of forming capacitor for semiconductor device

2006-10-24

2006-10-24

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S254000, C438S396000

Reexamination Certificate

active

07125766

ABSTRACT:
A method of forming a capacitor for a semiconductor device is disclosed. According to the method, a silicon germanium layer and an oxide layer are used as mold layers for forming a storage electrode. The oxide layer and the silicon germanium layer are anisotropically etched to form an opening and then the silicon germanium layer is further isotropically etched to form a recessed portion of the opening, such that the recessed portion of the opening formed in the silicon germanium layer is wider than at least some portion of the opening through the oxide layer. Thus, the mold layers are used to form a storage electrode having a lower portion which is wider than an upper portion thereof.

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