Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-01-29
2000-08-22
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438612, 438613, 438614, 22818021, 22818022, 29840, H01L 2144
Patent
active
061071811
ABSTRACT:
A method of manufacturing a template having through-holes for attracting and supporting electrically conductive balls by vacuum suction is disclosed. The through-holes are formed by etching and the side walls of the through-holes are smoothed by irradiation, with laser beams, of the side walls of the through-holes. A template and metallic bumps can be formed using this method. Alternatively, the template can be formed in a two-layered structure.
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Kitajima Masayuki
Muraoka Yoshitaka
Noda Yutaka
Fujitsu Limited
Niebling John F.
Zarneke David A
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