Method of forming bumps and template used for forming bumps

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438612, 438613, 438614, 22818021, 22818022, 29840, H01L 2144

Patent

active

061071811

ABSTRACT:
A method of manufacturing a template having through-holes for attracting and supporting electrically conductive balls by vacuum suction is disclosed. The through-holes are formed by etching and the side walls of the through-holes are smoothed by irradiation, with laser beams, of the side walls of the through-holes. A template and metallic bumps can be formed using this method. Alternatively, the template can be formed in a two-layered structure.

REFERENCES:
patent: 5284287 (1994-02-01), Wilson et al.
patent: 5516032 (1996-05-01), Sakemi et al.
patent: 5601229 (1997-02-01), Nakazato et al.
patent: 5695667 (1997-12-01), Eguchi et al.
patent: 5788143 (1998-08-01), Boyd et al.
patent: 5878943 (1999-03-01), Nishikawa et al.
patent: 5890283 (1999-04-01), Sakemi et al.
patent: 5976965 (1999-11-01), Takahashi et al.
Office Action of Japanese Patent Application No. 10-110869 dated Jan. 5, 1999 with translation.
Office Action of Japanese Patent Application No. 10-110869 dated Aug. 18, 1998 with Translation.

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