Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-05-20
2008-05-20
Zarneke, David A (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21508
Reexamination Certificate
active
07375020
ABSTRACT:
The present invention provides a method of forming a plurality of bumps over a wafer. The wafer has a plurality of contact pads and a passivation layer thereon and the passivation layer exposes the contact pads. An adhesion layer is formed over the active surface of the wafer and covers both the contact pads and the passivation layer. A metallic layer is formed over the adhesion layer. The patterned adhesion layer and patterned metallic layer remain on top of the contact pads. A photoresist layer having a plurality of openings that expose the metallic layer is formed on the active surface of the wafer. A flux material is deposited into the openings and then a solder block is disposed into each of the openings. A reflow process is performed to bond the solder block with the metallic layer. Finally, the flux material and the photoresist layer are removed.
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Fang Jen-Kuang
Huang Min-Lung
Lee Shih-Chang
Wu Tsung-Hua
Yeh Yung-I
Advanced Semiconductor Engineering Inc.
Jianq Chyun IP Office
Zarneke David A
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