Method of forming bond pad structure for the via plug process

Details Method of forming bond pad structure for the via plug process Method of forming bond pad structure for the via plug process

1996-08-22

1997-12-23

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438622, 438637, 438672, H01L 2160

Patent

active

057007357

ABSTRACT:
A bond pad structure and method of forming the bond pad structure which provides for reliable interconnections between the bond pad structure and the next level of circuit integration. The bond pad structure uses three metal pads separated by layers of dielectric. Via plugs are formed between the first and second metal pads and between the second and third metal pads. The via plugs are formed in a diamond shape with respect to the metal pads. The metal pads are squares with the same orientation. The periphery of the via plugs forms a square rotated 45.degree. with respect to the square metal pads.

REFERENCES:
patent: 5149674 (1992-09-01), Freeman, Jr. et al.
patent: 5266522 (1993-11-01), DiGiacomo et al.
patent: 5403777 (1995-04-01), Bryant et al.
Wolf, S., Silicon Processing for the VLSI Era, vol. 2, Lattice Press, 1990, pp. 127-131, 189-199, 1990.

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