Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2010-10-13
2011-11-08
Fourson, III, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C228S155000, C228S004500
Reexamination Certificate
active
08053351
ABSTRACT:
A method of forming at least one bonding structure may be provided. A ball may be formed on the front end of a wire outside a capillary. The capillary may be moved downwardly to form a preliminary compressed ball on a first pad using the ball. The capillary may be moved upwardly to form a neck portion on the preliminary compressed ball using the preliminary compressed ball and the wire. The capillary may be moved obliquely and downwardly to form a compressed ball. The capillary may extend the wire from the compressed ball to a second pad.
REFERENCES:
patent: 7188759 (2007-03-01), Calpito et al.
patent: 2006/0054665 (2006-03-01), Calpito et al.
patent: 04-255237 (1992-09-01), None
patent: 10-2008-0037845 (2008-05-01), None
Jung Ky-Hyun
Park Jae-Yong
Ryu Hwang-Bok
Song Ho-Geon
Fourson, III George
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
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