Method of forming and storing data in a multiple state...

Details Method of forming and storing data in a multiple state... Method of forming and storing data in a multiple state...

2005-06-21

2005-06-21

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C365S149000, C365S185230, C257S296000, C257SE27084, C257SE27112

Reexamination Certificate

active

06908808

ABSTRACT:
A method for forming a multiple state memory cell is provided. The method including forming a first electrode layer from a first conductive material, forming a second electrode layer from a second conductive material, and forming a first layer of a metal-doped chalcogenide material on the first electrode layer. The first layer providing a medium in which a conductive growth can be formed to electrically couple together the first and second electrode layers. The method further includes forming a second layer of a metal-doped chalcogenide material on the second electrode layer, and forming a third electrode layer from a third conductive material, the second layer providing a medium in which a conductive growth can be formed to electrically couple together the second and third electrode layers. A method for storing multiple data states in a memory is also provided.

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