Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Patent
1993-07-07
1995-06-20
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
430313, 430317, 430325, 430329, 216 66, 216 48, G03C 500
Patent
active
054260167
ABSTRACT:
The present invention is directed to a method of forming and removing a resist pattern, used in a semiconductor manufacture.
In a first mode of the present invention, an upper resist layer containing germanium is selectively formed on a bottom resist layer and a resist pattern is formed with the upper resist layer as a mask. In a second mode of the present invention, a resist layer formed on a substrate is selectively exposed to introduce a germanium compound into the exposed portions and the above described resist layer is subjected to an anisotropic dry etching to remove the nonexposed portions of the resist layer, whereby forming a resist pattern. Accordingly, the fine pattern can be formed on the substrate in high accuracy by the use of the above described resist pattern. In addition, in the first and the second modes of the present invention, the resist pattern is removed by the use of an acid having an oxidizing power, so that the resist pattern can be easily removed from the substrate.
REFERENCES:
patent: 4405710 (1983-09-01), Balasubramanyam
patent: 4454221 (1984-06-01), Chen
patent: 4761464 (1988-08-01), Zeigler
patent: 4935094 (1990-06-01), Mixon
patent: 4944893 (1990-07-01), Tanaka
Fujioka Hirofumi
Kishimura Shinji
Nagata Hitoshi
Nakajima Hiroyuki
Yoshida Yasuhiro
Duda Kathleen
Mitsubishi Denki & Kabushiki Kaisha
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