Method of forming an undoped silicate glass layer on a semicondu

Details Method of forming an undoped silicate glass layer on a semicondu Method of forming an undoped silicate glass layer on a semicondu

1999-05-20

1999-12-14

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438778, 438771, 438758, 204622, H01L 21316

Patent

active

060017465

ABSTRACT:
The present invention provides a method of forming an undoped silicate glass layer on a semiconductor wafer by performing a high density plasma chemical vapor deposition process. The semiconductor wafer being positioned in a deposition chamber. The method comprises forming the undoped silicate glass layer by performing the high density plasma chemical vapor deposition process in the deposition chamber under the following conditions: an argon (Ar) flow rate of 40 to 70 sccm (standard cubic centimeter per minute); an oxygen (O.sub.2) flow rate of 90 to 120 sccm; a silane flow rate of 70 to 100 sccm; a gas pressure of 3 to 10 mtorr; a temperature of 300 to 400.degree. C.; and a low frequency power of 2500 to 3500 watts. Wherein the ratio of Ar to O.sub.2 is 0.53, and O.sub.2 to silane is 1.23.

REFERENCES:
patent: 5937323 (1999-08-01), Orczyk et al.

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