Method of forming an oxidation-resistant TiSiN film

Details Method of forming an oxidation-resistant TiSiN film Method of forming an oxidation-resistant TiSiN film

2006-09-12

2006-09-12

Lund, Jeffrie R. (Department: 1763)

Coating apparatus

Gas or vapor deposition

Reexamination Certificate

active

07105060

ABSTRACT:
A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.

REFERENCES:
patent: 3381114 (1968-04-01), Nakanuma
patent: 4717596 (1988-01-01), Barbee et al.
patent: 4880163 (1989-11-01), Kobayashi et al.
patent: 5500256 (1996-03-01), Watabe
patent: 5516722 (1996-05-01), Kim
patent: 5871586 (1999-02-01), Crawley et al.
patent: 6126753 (2000-10-01), Shinriki et al.
patent: 6194310 (2001-02-01), Hsu et al.
patent: 6432791 (2002-08-01), Hutter et al.
patent: 6454860 (2002-09-01), Metzner et al.
patent: 6579372 (2003-06-01), Park
patent: 6583057 (2003-06-01), Alluri et al.
patent: 6793969 (2004-09-01), Shimogaki et al.
patent: 6800139 (2004-10-01), Shinriki et al.
patent: 6855368 (2005-02-01), Kori et al.
patent: 6913996 (2005-07-01), Yamasaki et al.
patent: 2002/0000195 (2002-01-01), Bang et al.
patent: 2002/0007790 (2002-01-01), Park
patent: 2002/0192369 (2002-12-01), Morimoto et al.
patent: 2003/0017267 (2003-01-01), Mukai et al.
patent: 2003/0108674 (2003-06-01), Chung et al.
patent: 2003/0148605 (2003-08-01), Shimogaki et al.
patent: 2003/0190497 (2003-10-01), Yang et al.
patent: 2003/0200929 (2003-10-01), Otsuki
patent: 2004/0029379 (2004-02-01), Yamasaki et al.
patent: 2004/0115584 (2004-06-01), Okabe
patent: 2004/0200414 (2004-10-01), Solanki et al.
patent: 2004/0237893 (2004-12-01), Park et al.
patent: 2005/0000426 (2005-01-01), Im et al.
patent: 2005/0020065 (2005-01-01), Shimogaki et al.
patent: 2005/0126483 (2005-06-01), Tognetti
patent: 2001-144032 (2001-05-01), None
Abstract, publisehd in Kanagawa Meeting of the Society of Chemical Engineers describing a CVD process of an oxidation-resistant Ti—Si—N barrier metal film, p. B208, ( Aug. 7, 2002).

Affiliated with

Also associated with

Rating

Method of forming an oxidation-resistant TiSiN film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming an oxidation-resistant TiSiN film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming an oxidation-resistant TiSiN film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3605620