Method of forming an MOS transistor and structure therefor

Details Method of forming an MOS transistor and structure therefor Method of forming an MOS transistor and structure therefor

2007-10-16

2007-10-16

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S252000, C438S256000, C438S270000

Reexamination Certificate

active

11367627

ABSTRACT:
In one embodiment, an MOS transistor is formed with trench gates. The gate structure of the trench gates generally has a first insulator that has a first thickness in one region of the gate and a second thickness in a second region of the gate.

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“Trench Power MOSFET Having Low Gate Charge”, Published at http:/ /ip.com/pubView/IPCOM000021950D on Feb. 17, 2004.

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