Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-11-09
2008-10-21
Smith, Matthew S. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S198000, C438S982000, C257S315000, C257S347000, C257S351000
Reexamination Certificate
active
07439109
ABSTRACT:
Disclosed is an integrated circuit structure that has a substrate having at least two types of crystalline orientations. First-type transistors (e.g., NFETs) are formed on first portions of the substrate having a first type of crystalline orientation, and second-type transistors (e.g., PFETs) are formed on second portions of the substrate having a second type of crystalline orientation. Some of the first portions of the substrate comprise non-floating substrate portions, and the remaining ones of the first portions and all of the second portions of the substrate comprise floating substrate portions.
REFERENCES:
patent: 6657223 (2003-12-01), Wang et al.
patent: 2004/0195623 (2004-10-01), Ge et al.
patent: 2004/0195646 (2004-10-01), Yeo et al.
Anderson Brent A.
leong MeiKei
Nowak Edward J.
Gibb & Rahman, LLC
International Business Machines - Corporation
Kotulak, Esq. Richard M.
Smith Matthew S.
Swanson Walter H
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