Method of forming an insulating structure having an...

Details Method of forming an insulating structure having an... Method of forming an insulating structure having an...

2007-04-10

2007-04-10

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S626000, C438S778000

Reexamination Certificate

active

10899934

ABSTRACT:
In a method of forming an insulating structure, an insulating interlayer is formed on a substrate using a silicon source gas and a reaction gas. A capping layer is formed in-situ on the insulating interlayer by increasing a flow rate of an oxidizing gas included in the reaction gas so that the capping layer has a second thickness when the insulating interlayer is formed on the substrate to have a first thickness. The insulating structure dose not have an interface between the insulating interlayer and the capping layer so that the insulating interlayer is not subject to damage by a cleaning solution during a subsequent cleaning process, since the cleaning solution maynot permeate into the insulating structure. Additionally, leakage current is mitigated or eliminated between the insulating interlayer and the capping layer, thereby improving the reliability of a semiconductor device including the insulating structure.

REFERENCES:
patent: 6486059 (2002-11-01), Lee et al.
patent: 6576545 (2003-06-01), Hopper et al.
patent: 6627532 (2003-09-01), Gaillard et al.
patent: 6656837 (2003-12-01), Xu et al.
patent: 6974766 (2005-12-01), Huang
patent: 2002/0106891 (2002-08-01), Kim et al.
patent: 2004/0041239 (2004-03-01), Ruelke et al.
patent: 2004/0087179 (2004-05-01), San et al.
patent: 20010051102 (2001-06-01), None
patent: 1020020027269 (2002-04-01), None
patent: 1020020045494 (2002-06-01), None

Affiliated with

Also associated with

Rating

Method of forming an insulating structure having an... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming an insulating structure having an..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming an insulating structure having an... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3792866