Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
1999-11-04
2001-09-25
Bowers, Charles (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S149000, C438S151000, C438S758000, C438S771000, C438S789000, C438S790000
Reexamination Certificate
active
06294482
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a method of forming an insulating layer pattern in a liquid crystal display which enables the establishment of an insulating layer pattern on a substrate under low temperature without the use of expensive equipment and complicated processes.
2. Discussion of Related Art
A process of fabricating a thin film transistor (hereinafter “TFT”) in liquid crystal display (hereinafter “LCD”) includes the steps of forming a gate insulating layer between a gate electrode and an active layer, an insulating interlayer, a passivation layer comprising a protection layer that covers the source/drain electrodes and the like. In the process, silicon oxide or silicon nitride is used for the gate insulating layer, insulating interlayer, and passivation layer.
Chemical vapor deposition(hereinafter abbreviated CVD) or thermal oxidation as a related art is preferably used for forming silicon oxide and silicon nitride as the insulation layer.
In CVD, a process chamber for maintaining a vacuum state is supplied with silicon gas in an ambient of nitrogen or oxygen, and a thin layer is formed on a substrate through decomposition and chemical reactions.
In thermal oxidation which is an open-tube reaction undertaken under atmospheric pressure without the vacuum state, silicon oxide as the insulation layer is formed by exposing silicon to oxygen gas at a high temperature of between 1000 and 1200°. Thus, an insulating layer of pure quality is formed having neither ionic impurities nor defects at an interface.
As mentioned in the above explanation, an insulating layer in LCD's according to a related art is formed by CVD or thermal oxidation. Unfortunately, the CVD method requires a complicated process and highly expensive equipment for maintaining a reaction chamber in a vacuum state. Also, the thermal oxidation method requires a high temperature for forming an insulating layer and exhibits a slow growing speed of formation.
SUMMARY OF THE INVENTION
Accordingly, the present invention is directed to a method of forming an insulating layer pattern in a liquid crystal display that substantially obviates one or more of the problems, limitations, and disadvantages of the related art.
Thus, an object of the present invention is to provide a method of forming an insulating layer in LCD's under low temperature and without the necessity of using expensive equipment. Additional features and advantages of the present invention will be set forth in the description which follows and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the present invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, the present invention includes the steps of forming an organic thin layer containing silicon on an insulated substrate, exposing the thin layer to a gaseous ambience, including oxygen, applying ultraviolet rays to the thin layer using a mask which is defined with a predetermined pattern to generate a plurality of oxygen radicals and silicon radicals, forming an insulating layer by reacting the silicon radicals with the oxygen radicals, and defining an insulating layer pattern by removing a portion of the thin layer free of the ultraviolet rays.
In another aspect, the present invention includes the steps of forming an electrode on an insulated substrate, forming an organic thin layer covering the electrode on the insulated substrate wherein the organic thin layer contains silicon, exposing the thin layer to a gaseous ambience including oxygen, applying ultraviolet rays to the thin layer using a mask having a predetermined pattern to generate a plurality of oxygen radicals and silicon radicals, forming an insulating layer by reacting the oxygen radicals with the silicon radicals, and defining an insulating layer pattern by removing a portion of the thin layer free of the ultraviolet rays.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to limit the scope of the present invention.
REFERENCES:
patent: 6060130 (2000-05-01), Kim
Bowers Charles
Kil{acute over (d)}ay Lisa
LG LCD Inc.
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