Method of forming an EPROM cell and structure therefor

Details Method of forming an EPROM cell and structure therefor Method of forming an EPROM cell and structure therefor

2006-05-30

2006-05-30

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000

Reexamination Certificate

active

07052959

ABSTRACT:
An EPROM cell includes a control gate and a control transistor. A portion of the control transistor is formed as a portion of the control gate.

REFERENCES:
patent: 4590504 (1986-05-01), Guterman
patent: 4649520 (1987-03-01), Eitan
patent: 4701776 (1987-10-01), Perlegos et al.
patent: 4979004 (1990-12-01), Esquivel et al.
patent: 5227326 (1993-07-01), Walker
patent: 5465231 (1995-11-01), Ohsaki
patent: 5471422 (1995-11-01), Chang et al.
patent: 5480820 (1996-01-01), Roth et al.
patent: 5501996 (1996-03-01), Yang et al.
patent: 5646060 (1997-07-01), Chang et al.
patent: 5747846 (1998-05-01), Iida et al.
patent: 5763912 (1998-06-01), Parat et al.
patent: 5776787 (1998-07-01), Keshtbod
patent: 5929478 (1999-07-01), Parris et al.
patent: 6627947 (2003-09-01), Hu et al.
patent: 6653684 (2003-11-01), Fournel et al.
patent: 6841821 (2005-01-01), Hsu

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