Method of forming an epitaxial layer for raised drain and...

Details Method of forming an epitaxial layer for raised drain and... Method of forming an epitaxial layer for raised drain and...

2007-05-29

2007-05-29

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S607000, C438S682000, C438S683000, C438S649000, C438S738000, C257SE21165, C257SE21430, C257SE21129, C257SE21431, C257SE21438

Reexamination Certificate

active

11082122

ABSTRACT:
By substantially amorphizing a selectively epitaxially grown silicon layer used for forming a raised drain and source region and a portion of the underlying substrate, or just the surface region of the substrate (prior to growing the silicon overlayer), the number of interface defects located between the grown silicon layer and the initial substrate surface may be significantly reduced. Consequently, deleterious effects such as charge carrier gettering or creating diffusion paths for dopants may be suppressed.

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