Method of forming an embedded flash memory device

Details Method of forming an embedded flash memory device Method of forming an embedded flash memory device

2006-06-06

2006-06-06

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S596000, C438S981000

Reexamination Certificate

active

07056791

ABSTRACT:
A method of fabricating an embedded flash memory device. A substrate having a memory area is provided. A device is formed on the substrate in the memory area. A conductive layer is formed over the substrate to cover the device in the memory area. A conformal insulating layer is formed on the conductive layer and the substrate. The insulating layer is removed at an edge of the memory area. By anisotropic etching, the insulating layer and part of the conductive layer is removed to form a control gate on the sidewall of the device. Thus, polysilicon residue caused by the conventional control gate process does not occur.

REFERENCES:
patent: 6265267 (2001-07-01), Huang
patent: 6429075 (2002-08-01), Yeh et al.
patent: 6706592 (2004-03-01), Chern et al.
patent: 6831325 (2004-12-01), Lojek
patent: 2002/0142545 (2002-10-01), Lin

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