Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-28
2011-06-28
Fahmy, Wael M (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S626000, C438S627000, C438S643000, C257S751000, C257S752000, C257S760000
Reexamination Certificate
active
07968456
ABSTRACT:
A semiconductor interconnect structure and method providing an embedded barrier layer to prevent damage to the dielectric material during or after Chemical Mechanical Polishing. The method employs a combination of an embedded film, etchback, using either selective CoWP or a conformal cap such as a SiCNH film, to protect the dielectric material from the CMP process as well as subsequent etch, clean and deposition steps of the next interconnect level.
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McLaughlin Paul S.
Sankaran Sujatha
Standaert Theodorus E.
Fahmy Wael M
International Business Machines - Corporation
Kalam Abul
Petrokaitis Joseph
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