Method of forming an electrode of a semiconductor device

Details Method of forming an electrode of a semiconductor device Method of forming an electrode of a semiconductor device

1997-12-23

1999-07-20

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438964, 438398, H01L 218247

Patent

active

059267119

ABSTRACT:
This invention discloses a method of forming an electrode of semiconductor device. In the present invention, an amorphous silicon film is formed on a substrate, and silicon seeds are formed on the silicon film. Thereinafter, the heat treatment is performed for growing, thereby forming an hemispherical roughness structure on surface of said charge storage electrode and increasing a surface area in unit area.

REFERENCES:
patent: 5597756 (1997-01-01), Fazan et al.

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