Method of forming an antifuse on a semiconductor substrate...

Details Method of forming an antifuse on a semiconductor substrate... Method of forming an antifuse on a semiconductor substrate...

2006-04-11

2006-04-11

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S600000

Reexamination Certificate

active

07026217

ABSTRACT:
A method of producing an antifuse includes introducing nitrogen by ion implantation means into the substrate. An oxide dielectric layer is then formed on the nitrided substrate in a wet oxidation ambient. The conditions of the ion implantation and the oxidation are controlled to generate a dielectric with uniform thickness and a low breakdown voltage when subjected to a high electric field.

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patent: 5763922 (1998-06-01), Chau
patent: 2004/0004269 (2004-01-01), Fifield et al.
patent: 2004/0051162 (2004-03-01), Chidambarrao et al.

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