Method of forming amorphous silicon layer and method of...

Details Method of forming amorphous silicon layer and method of... Method of forming amorphous silicon layer and method of...

2011-08-16

2011-08-16

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S482000, C257S057000

Reexamination Certificate

active

07998843

ABSTRACT:
Methods and systems for forming an amorphous silicon layer are disclosed for one or more embodiments. For example, a substrate may be provided, and an amorphous silicon layer, in which a ratio of Si—H to Si—H2has a value equal to or less than 4 to 1, may be formed on the substrate using chemical vapor deposition equipment.

REFERENCES:
patent: 4631198 (1986-12-01), Kakinuma et al.
patent: 5093703 (1992-03-01), Minami et al.
patent: 5796121 (1998-08-01), Gates
patent: 6352910 (2002-03-01), Harshbarger et al.
patent: 6391690 (2002-05-01), Miyasaka
patent: 7598159 (2009-10-01), Oh et al.
patent: 7655542 (2010-02-01), Choi et al.
patent: 2010/0003780 (2010-01-01), Choi et al.
patent: 2005-93986 (2005-04-01), None
patent: 10-2005-0053356 (2005-06-01), None
patent: 10-2005-0054788 (2005-06-01), None

Affiliated with

Also associated with

Rating

Method of forming amorphous silicon layer and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming amorphous silicon layer and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming amorphous silicon layer and method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2717618