Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2008-05-22
2011-10-25
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S250000, C257SE21476, C257SE21294, C257S316000
Reexamination Certificate
active
08043952
ABSTRACT:
Provided is a method of forming an aluminum oxide layer and a method of manufacturing a charge trap memory device using the same. The method of forming an aluminum oxide layer may include forming an amorphous aluminum oxide layer on an underlying layer, forming a crystalline auxiliary layer on the amorphous aluminum oxide layer, and crystallizing the amorphous aluminum oxide layer. Forming the crystalline auxiliary layer may include forming an amorphous auxiliary layer on the amorphous aluminum oxide layer; and crystallizing the amorphous auxiliary layer.
REFERENCES:
patent: 6355519 (2002-03-01), Lee
patent: 2004/0051134 (2004-03-01), Jang et al.
patent: 2008/0001249 (2008-01-01), Sheen et al.
patent: 2008/0079064 (2008-04-01), Lai et al.
Choi Sang-moo
Lee Eun-ha
Park Sang-jin
Seol Kwang-soo
Shin Woong-chul
Brown Valerie N
Harness & Dickey & Pierce P.L.C.
Nguyen Ha Tran T
Samsung Electronics Co,. Ltd.
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