Method of forming a trench-type semiconductor memory device

Details Method of forming a trench-type semiconductor memory device Method of forming a trench-type semiconductor memory device

1996-08-15

1998-09-08

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438244, 438253, H01L 2170

Patent

active

058044787

ABSTRACT:
A type of semiconductor device with a configuration characterized by the fact that an electroconductive film (90) is formed beforehand in connection to step (54a) of insulating film(54), and an electroconductive layer (63) with step from the aforementioned electroconductive film is coated to form the side contact of the memory cell. Even in the case when breakage takes place in electroconductive layer (63), the electrical conduction is still maintained via electroconductive film (90), and no wire breakage, in effect, takes place. In addition, it is possible to form the pattern for the aforementioned electroconductive layer by, for instance, etching back method without applying a special mask; hence, the manufacturing process is simplified.

REFERENCES:
patent: 5135883 (1992-08-01), Bae et al.

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