Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-11-28
2006-11-28
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S365000
Reexamination Certificate
active
07141476
ABSTRACT:
A transistor having a bottom gate formed from a layer of gate material and a channel region formed from a layer semiconductor material. In some examples, the layer of gate material is patterned separately from the layer of semiconductor material. In some examples the patterning of the layer of gate material also leaves other conductive structures that may be, in some examples, used to provide a bottom gate bias voltage to the bottom gate. In some examples, the layer of semiconductor material is formed by bonding two wafers together with a substrate of one of the wafers being cleaved, wherein a remaining portion of the semiconductor substrate is a semiconductor layer from which the channel region is formed.
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Baumeister B. William
Clingan, Jr. James L.
Dolezal David G.
Freescale Semiconductor Inc.
Such Matthew
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