Method of forming a transistor using selective epitaxial growth

Details Method of forming a transistor using selective epitaxial growth Method of forming a transistor using selective epitaxial growth

2006-05-02

2006-05-02

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C438S756000, C134S003000

Reexamination Certificate

active

07037793

ABSTRACT:
A method of forming a transistor involves firstly forming at least one gate structure on a semiconductor substrate. Then, a surface cleaning process is performed. In the surface cleaning process, a chemical oxidation method is utilized for forming a first oxide layer on a surface of the semiconductor substrate not covered with the gate structure and the first oxide layer is removed subsequently. Finally, a selective epitaxial growth method is utilized for forming a first epitaxial layer on the surface of the semiconductor substrate.

REFERENCES:
patent: 6580134 (2003-06-01), Song et al.
patent: 6638365 (2003-10-01), Ye et al.
patent: 6878575 (2005-04-01), Yoo et al.
patent: 2002/0146888 (2002-10-01), Ryu et al.
patent: 2005/0093075 (2005-05-01), Bentum et al.

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