Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate
Patent
1995-03-06
1996-05-07
Pianalto, Bernard
Coating processes
Direct application of electrical, magnetic, wave, or...
Pretreatment of substrate or post-treatment of coated substrate
427253, 4272552, 427271, 427275, 427290, 427294, 427299, 427333, 427337, 427552, 427576, C23C 1402
Patent
active
055144250
DESCRIPTION:
BRIEF SUMMARY
TECHNICAL FIELD
The present invention relates to a method of forming a thin film, and more particularly to a method of forming a thin film by utilizing plasma.
BACKGROUND ART
In recent years, large-scale integrated circuits (LSIs), each comprising many transistors, many resistors and many similar elements connected, constituting an electric circuit, are incorporated in great numbers in the major components of computers or communication apparatuses.
The performance of an LSI can be enhanced by increasing its integration density, that is, by making its elements smaller. To make the elements smaller it is necessary to employ techniques of forming thin films in grooves having a large aspect ratio.
One of the techniques of forming thin films is the plasma CVD method in which a low-pressure plasma source is used. The plasma CVD method is attracting attention because the gases have long mean free path, providing reactive species which can propagate very linearly. Known as low-pressure plasma sources are EBEP (Electron Beam Excited Plasma), ECR (Electron Cyclotron Resonance) plasma, HELICON plasma and the like.
In the plasma CVD method using a low-pressure plasma source, a voltage is applied to a substrate being processed, so that ions of deposited species are positively drawn from the plasma to the substrate. A thin film 82 having a high directionality can thereby be formed in a groove formed in the substrate and having vertical wall surfaces.
If the groove such a tapered one as is shown in FIG. 6, a thin film 82 will be formed also on the wall surfaces of the groove. In this case, it is difficult to form a film having a high directionality.
As described above, the conventional plasma CVD method using a low-pressure plasma source has the problem that a film will be formed also on the wall surfaces of a tapered groove which has a high aspect ratio and which has tapered wall surfaces.
The present invention has been made in consideration of the above circumstances. Its object is to provide a method of forming a thin film in a groove made in a surface of a substrate 81 being processed, by applying a voltage to the substrate, thereby drawing ions of deposited species from plasma to the substrate, even if the groove is a tapered one having a high aspect ratio.
DISCLOSURE OF INVENTION
According to the present invention, there is provided a method of forming a thin film on a substrate which is processed and which has a groove in its surface, said method comprising the steps of: introducing a material gas containing a metallic substance and a halogen-based gas into a film-forming chamber in which the substrate is located; and converting a mixture gas of the halogen-based gas and the material gas into plasma, thereby to form a thin film anisotropically on the substrate being processed. The term "metallic substance" means not only a metal, but also a metal-containing substance such as an organic metal or a metal halide.
According to the present invention, there is provided a method of forming a thin film on a substrate which is processed and which has a groove in its surface, said method comprising the steps of: introducing a material gas containing a metallic substance into a film-forming chamber in which the substrate is located; converting the material gas into plasma, thereby forming a thin film on the substrate being processed; exciting a halogon-based gas by a plasma, and applying the halogen-based gas excited by the plasma to the substrate located in the chamber, thereby etching an entire surface of the thin film and leaving the thin film anisotropically on the substrate. In the method of forming a thin film, according to this invention, the cations of the metallic substance (i.e., material of the thin film), which have generated from the plasma, are transported to the bottom of the groove in a greater quantity than to the wall surfaces of the groove. The thin film formed on the wall surfaces of the groove are much thinner than the film form on the bottom of the groove.
The halogen-based gas is introduced into
REFERENCES:
J. Vac. Sci. Technol. B, vol. 10, No. 6, p. 2699, Y. Aoyagi, T. Hara, M. Hamagaki, M. Ryoji, K. Ohniszhi, Nov.-Dec. 1992 (in English).
Oyo Buturi, vol. 63 No. 6, p. 559, H. Sugai, Jun. 1994 (in Japanese).
Hayasaka Nobuo
Himori Shinji
Ito Hitoshi
Mochizuki Syuji
Nagaseki Kazuya
Kabushiki Kaisha Toshiba
Pianalto Bernard
Tokyo Electron Limited
Tokyo Electron Yamanashi Limited
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