Method of forming a thin film with a low hydrogen content on...

Details Method of forming a thin film with a low hydrogen content on... Method of forming a thin film with a low hydrogen content on...

2005-08-23

2005-08-23

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S792000, C438S798000, C438S216000

Reexamination Certificate

active

06933245

ABSTRACT:
A method of forming a thin film with a low hydrogen contents is provided by positioning a substrate inside a processing chamber, and supplying reacting materials into the chamber, chemisorbing a portion of the reacting materials onto the substrate. Then, a nitrogen (N2) remote plasma treatment is performed to reduce the hydrogen content of thin film layer formed by chemisorption of the reacting materials on the substrate. Accordingly, a thin film is formed having a low hydrogen content, since the hydrogen bonds in the thin film layer formed by chemisorption of the reacting materials are removed.

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English Abstract.

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