Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-03-10
2009-02-03
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257S642000
Reexamination Certificate
active
07485585
ABSTRACT:
In a method of forming a thin film and methods of manufacturing a gate structure and a capacitor, a hafnium precursor including one alkoxy group and three amino groups, and an oxidizing agent are provided on a substrate. The hafnium precursor is reacted with the oxidizing agent to form the thin film including hafnium oxide on the substrate. The hafnium precursor may be employed for forming a gate insulation layer of a transistor or a dielectric layer of a capacitor.
REFERENCES:
patent: 6524967 (2003-02-01), Alluri
patent: 7094712 (2006-08-01), Im et al.
patent: 2004/0033698 (2004-02-01), Lee et al.
patent: 2006/0062917 (2006-03-01), Muthukrishnan et al.
patent: 10-2004-0041944 (2004-05-01), None
Chung Eun-Ae
Im Ki-Vin
Kim Sung-Tae
Kim Young-Sun
Park Young-Geun
Harness & Dickey & Pierce P.L.C.
Lee Calvin
Samsung Electronics Co,. Ltd.
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