Method of forming a thin film for a semiconductor device

Details Method of forming a thin film for a semiconductor device Method of forming a thin film for a semiconductor device

1994-06-14

1996-11-05

Padgett, Marianne

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427563, 427575, 427579, H05H 102, H05H 130, H05H 124

Patent

active

055715710

ABSTRACT:
A method of forming conformal, high quality silicon oxide films that can be deposited over closely spaced, submicron lines and spaces without the formation of voids, comprises forming a plasma of TEOS and a selected halogen-containing gas in certain ratios. By proper control of the energy sources that create the plasma, the proper selection of the halogen-containing gas and selection of other processing parameters, high deposition rates can also be achieved.

REFERENCES:
patent: 4282267 (1981-08-01), Kuyel
patent: 4461783 (1984-07-01), Yamazaki
patent: 4668365 (1987-05-01), Foster et al.
patent: 4778721 (1988-10-01), Sliemers et al.
patent: 4818563 (1989-04-01), Ishihara et al.
patent: 4872947 (1989-10-01), Wang et al.
patent: 4894352 (1990-01-01), Lane et al.
patent: 5013691 (1991-05-01), Lory et al.
patent: 5206060 (1993-04-01), Balian et al.
patent: 5223457 (1993-06-01), Mintz et al.
patent: 5275977 (1994-01-01), Otsubo et al.
patent: 5286518 (1994-02-01), Cain et al.
patent: 5288518 (1994-02-01), Homma
patent: 5356722 (1994-10-01), Nguyen et al.
patent: 5429995 (1995-07-01), Nishiyama et al.
patent: 5462899 (1995-10-01), Ikeda
patent: 5492736 (1996-02-01), Laxman et al.
Abstract of JP63062238 from Patent Abstracts of Japan vol. 12, No. 285 (E-642) published Mar. 1988 to Tsunetoshi et al.
Webb et al, "Silicon Dioxide Films produced . . . " Oric, 2nd Int'l ULSI Conf. 1989 No month.
Yu et al "Step Coverage Study of PETEOS . . . " VMIC Conf. 1990 IEEE, Jun. 12-13, 1990.

Affiliated with

Also associated with

Rating

Method of forming a thin film for a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a thin film for a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a thin film for a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2013445