Method of forming a thin film by plasma chemical vapor depositio

Details Method of forming a thin film by plasma chemical vapor depositio Method of forming a thin film by plasma chemical vapor depositio

1998-02-06

2000-05-09

Meeks, Timothy

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427571, 427575, C23C 1644

Patent

active

060601310

ABSTRACT:
A substrate to be coated with a thin film is placed inside a vacuum chamber, an ECR plasma is generated and introduced into the vacuum chamber by means of a specified magnetic field generated inside the vacuum chamber and a reaction gas, as well as an inert gas, is introduced into the vacuum chamber while a negative DC voltage superposed with a high-frequency pulse with frequency 25-250 kHz is applied to the substrate by a voltage applying device such that the voltage of the substrate reaches a positive value instantaneously. The frequency of the superposed pulse is selected by using an ammeter to determine an optimum frequency for minimizing the load current of the voltage-applying circuit.

REFERENCES:
patent: 4970435 (1990-11-01), Tanaka et al.
patent: 5160397 (1992-11-01), Doki et al.

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