Method of forming a storage electrode of a semiconductor device

Details Method of forming a storage electrode of a semiconductor device Method of forming a storage electrode of a semiconductor device

2007-07-03

2007-07-03

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C257SE21649

Reexamination Certificate

active

11516707

ABSTRACT:
In a storage electrode of a semiconductor device, and a method of forming the same, the storage electrode includes an outer cylinder including a first outer cylindrical portion having a first outer diameter, and a second outer cylindrical portion that is formed on the first outer cylindrical portion and having a second outer diameter, which is less than the first outer diameter, the first and second outer cylindrical portions having substantially equal inner diameters, and an inner cylinder formed on inner surfaces of the outer cylinder.

REFERENCES:
patent: 5953618 (1999-09-01), Choi
patent: 6097053 (2000-08-01), Ando
patent: 6201273 (2001-03-01), Wang et al.
patent: 6380579 (2002-04-01), Nam et al.
patent: 6548853 (2003-04-01), Hwang et al.
patent: 2001/0052614 (2001-12-01), Ishibashi
patent: 2003/0122174 (2003-07-01), Fukuzumi
patent: 2005/0205915 (2005-09-01), Son
patent: 10-2000-0065969 (2000-11-01), None
patent: 10-2002-0043674 (2002-06-01), None
patent: 10-2002-0055137 (2002-07-01), None

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