Method of forming a split programming virtual ground SONOS...

Details Method of forming a split programming virtual ground SONOS... Method of forming a split programming virtual ground SONOS...

2007-07-17

2007-07-17

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C257SE21679

Reexamination Certificate

active

10711258

ABSTRACT:
A method of forming an SPVG SONOS memory. First, a substrate having a well and a plurality of select gate structures is provided. Then, a plurality of sacrificial spacers are formed alongside each select gate structure, and an implantation process is performed to form a doped region in the well between any two adjacent select gate structures. Afterward, the sacrificial spacers are removed, and a composite dielectric layer is formed on the select gate structures and the substrate. Finally, a plurality of word lines are formed on the composite dielectric layer.

REFERENCES:
patent: 6248633 (2001-06-01), Ogura et al.
patent: 6759290 (2004-07-01), Ogura et al.

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