Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-06-03
2008-06-03
Rose, Kiesha L (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S531000, C438S516000
Reexamination Certificate
active
07381607
ABSTRACT:
An inductor formed on a semiconductor substrate, comprising active device regions. The inductor comprises conductive lines formed on a dielectric layer overlying the semiconductor substrate. The conductive lines are patterned and etched into the desired shape, in one embodiment a planar spiral. A region of the substrate below the inductor are removed to lower the inductive Q factor.
REFERENCES:
patent: 5227659 (1993-07-01), Hubbard
patent: 5446311 (1995-08-01), Ewen et al.
patent: 5736749 (1998-04-01), Xie
patent: 5788854 (1998-08-01), Desaigoudar et al.
patent: 6002161 (1999-12-01), Yamazaki
patent: 6057202 (2000-05-01), Chen et al.
patent: 6083802 (2000-07-01), Wen et al.
patent: 6140197 (2000-10-01), Chu et al.
patent: 6153489 (2000-11-01), Park et al.
patent: 6160303 (2000-12-01), Fattaruso
patent: 6211056 (2001-04-01), Begley et al.
patent: 6249191 (2001-06-01), Forbes
patent: 6420773 (2002-07-01), Liou
patent: 6429504 (2002-08-01), Beaussart et al.
patent: 6503838 (2003-01-01), Swanson
patent: 6534843 (2003-03-01), Acosta et al.
patent: 7075167 (2006-07-01), Harris et al.
patent: 1143517 (2001-10-01), None
patent: 11354330 (1999-12-01), None
Downey Stephen W.
Harris Edward B.
Agere Systems Inc.
Rose Kiesha L
LandOfFree
Method of forming a spiral inductor in a semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a spiral inductor in a semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a spiral inductor in a semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2812010