Method of forming a silicon dioxide layer

Details Method of forming a silicon dioxide layer Method of forming a silicon dioxide layer

2006-07-25

2006-07-25

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S255000, C438S391000, C438S398000, C438S753000, C438S770000, C438S964000

Reexamination Certificate

active

07081384

ABSTRACT:
The present invention refers to a method of forming a silicon dioxide layer by thermally oxidizing at least one monocrystalline silicon surface region on a semiconductor substrate. The silicon surface region has a curved surface. The method can include providing a semiconductor substrate having at least one monocrystalline silicon surface region having a curved surface, roughening the surface of the at least one monocrystalline silicon surface region to produce a layer of porous silicon, and thermally oxidizing the at least one roughened monocrystalline silicon surface.

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Zorinsky E.J., et al: “The “Islands” Method—A Manufacturable Porous Silicon SOI Technology”; IEEE, IEDM 86, XP-002079454, pp. 431-434.

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