Method of forming a silicon carbide JFET

Details Method of forming a silicon carbide JFET Method of forming a silicon carbide JFET

1995-10-02

1997-06-24

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

438931, 438945, H01L 21265, H01L 2120

Patent

active

056416954

ABSTRACT:
An implant mask (14) and an etch mask (16) are utilized in forming a silicon carbide JFET (10). A source opening (17) and a drain opening (18) are formed in the masks (14,16). The etch mask (16) is removed, and a source area (19) and a drain area 21 are implanted through the openings (17,18) and source and drain contact (23, 24) are formed. A protective layer (26) is used to form source and drain contacts (23,24). A gate contact (27) is utilized to ensure the gate (28) is self-aligned to the gate contact (27).

REFERENCES:
patent: 5378642 (1995-01-01), Brown et al.

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