Method of forming a shallow trench isolation by using PE-oxide a

Details Method of forming a shallow trench isolation by using PE-oxide a Method of forming a shallow trench isolation by using PE-oxide a

1998-04-07

2000-09-12

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438427, 438435, H01L 21336, H01L 2176

Patent

active

061177407

ABSTRACT:
A thin silicon dioxide layer is formed on the substrate to act as a pad layer. Subsequently, a silicon nitride layer is deposited on the pad layer. Trenches are formed in the substrate. The trenches include first trenches and a second trench that has a relatively wide opening compared to the first trenches. An CVD-oxide layer is formed on the silicon nitride layer and refilled into the trenches. A multi-layer is then formed on the CVD-oxide layer. The multi-layer includes alternating PE-nitride layers and PE-oxide layers. Subsequently, a chemical mechanical polishing (CMP) technology is used for removing the multi-layer layer to the surface of the silicon nitride layer.

REFERENCES:
patent: 5387539 (1995-02-01), Yang et al.
patent: 5728621 (1998-03-01), Zheng et al.
patent: 5872045 (1999-02-01), Lou et al.

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