Method of forming a semiconductor structure comprising an...

Details Method of forming a semiconductor structure comprising an... Method of forming a semiconductor structure comprising an...

2008-02-26

2010-10-19

Nguyen, Khiem D (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C257SE21057, C257SE21058

Reexamination Certificate

active

07816199

ABSTRACT:
A method of forming a semiconductor structure includes providing a substrate having a first feature and a second feature. A mask is formed over the substrate. The mask covers the first feature. An ion implantation process is performed to introduce ions of a non-doping element into the second feature. The mask is adapted to absorb ions impinging on the first feature. After the ion implantation process, an annealing process is performed.

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patent: 196 11 959 (1997-03-01), None
patent: WO 2005/048320 (2005-05-01), None
Translation of Official Communication from German Patent Office for German Patent Application No. 10 2007 035 838.7 dated Oct. 24, 2008.

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